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Infineon / EUPEC D1961SH45TS02 (D1961SH45T) High-Power Disc Diode

Original price was: $2,288.00.Current price is: $2,188.00.

Parameter Value
Manufacturer Infineon Technologies (formerly EUPEC)
Product Series / Type D1961SH (IGCT / Presspack Freewheeling Diode Disc)
Catalog / Part Number D1961SH45TS02 (Variant of D1961SH45T)
Repetitive Peak Reverse Voltage (V_{RRM}) 4,500 V
Average Forward Current (I_{FAVM}) 1,960 A (at T_c = 85 °C)
Surge Forward Current (I_{FSM}) 40,000 A (at 50 Hz, T_{vj} = T_{vjmax})
Category: SKU: D1961SH45TS02 Tag:

Description

The Infineon D1961SH45TS02 (commonly cataloged as the D1961SH45T) is a high-power, fast-recovery disc diode (press-pack diode) engineered for heavy-duty industrial power electronics, medium-voltage drives, wind turbine converters, and IGCT/IGBT freewheeling applications. Housed in a hermetically sealed ceramic package, this capsule diode delivers low on-state losses and high surge current capabilities designed to handle rigorous electrical and thermal cycling environments.

Product Specifications

Parameter Value
Manufacturer Infineon Technologies (formerly EUPEC)
Product Series / Type D1961SH (IGCT / Presspack Freewheeling Diode Disc)
Catalog / Part Number D1961SH45TS02 (Variant of D1961SH45T)
Repetitive Peak Reverse Voltage (V_{RRM}) 4,500 V
Average Forward Current (I_{FAVM}) 1,960 A (at T_c = 85 °C)
Surge Forward Current (I_{FSM}) 40,000 A (at 50 Hz, T_{vj} = T_{vjmax})
Housing Type / Package Ceramic disc package (Diameter: 120 mm, Height: 26 mm)
Contact Pole Diameter 86 mm
Required Clamping Force 36 to 52 kN
Max Operating Junction Temp (T_{vjmax}) +140 °C
Compliance Standards RoHS compliant, CE (verify with OEM datasheet)

Commercial & Logistics Information

  • Condition: New Original Factory Sealed / Factory Surplus / Tested Refurbished
  • Availability: Stock levels fluctuate based on industrial distributor availability; typically sourced via specialized high-power semiconductor suppliers
  • Standard Lead Time: 1 to 3 business days for items in stock; factory-matched or synchronized dual-packs may require extended handling windows
  • Warranty: 1-year standard vendor or manufacturer replacement warranty
  • Pricing Note: Listed price is indicative and subject to market volatility based on raw material costs and high-power component scarcity. Contact our engineering sales desk for a formal quotation and lot date-code verification.

Technical Application & Integration Notes

The D1961SH45TS02 requires precise mechanical mounting within a high-pressure clamp assembly to ensure optimal thermal and electrical contact across both pole faces. Technicians must apply a uniform clamping force between 36 kN and 52 kN using a calibrated torque wrench or hydraulic press tool, following the manufacturer’s recommended thermal paste application guidelines.

Designed specifically as a freewheeling or clamping diode for IGCTs and press-pack IGBTs, it exhibits soft turn-off behavior at high di/dt rates, preventing destructive voltage overshoots in medium-voltage inverter legs. Always verify that heat sink surface flatness and finish meet manufacturer specifications prior to installation.

Frequently Asked Questions

Q: What is the difference between the D1961SH45T base model and the D1961SH45TS02 suffix? A: Suffix codes like “S02” typically denote specific internal sorting parameters, customer-specific testing requirements, or packaging variants designated by the factory. Verify electrical matching parameters if replacing a single unit in a series-stacked bridge or multi-phase inverter leg.

Q: Can this disc diode be operated without a heat sink? A: No. Due to the high power dissipation levels inherent in multi-kilovolt switching applications, the diode must be clamped between liquid- or air-cooled heat sinks capable of maintaining case temperature limits.

Q: What parameters are critical to check during routine maintenance? A: Periodically check mounting clamp tension to ensure thermal cycling has not relaxed the required 36–52 kN clamping force, which can lead to localized hotspots and premature device failure.

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